VISHAY · FETs & Power MOSFETs · MPN SI5513CDC-T1-GE3
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| Current - Continuous Drain(Id) | 49A |
|---|---|
| RDS(on) | 255mΩ@2.5V |
| Pd - Power Dissipation | 3.1W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 285pF |
| Gate Charge(Qg) | 3.6nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 65pF |
N-Channel+P-Channel Array 20V 49A 3.1W Surface Mount SMD-8P,3.2x1.6mm