VISHAY SI5504BDC-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI5504BDC-T1-GE3

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Specifications

Gate Charge(Qg)2nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)140mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)220pF

Technical details

30V 2.5A 1.5W Surface Mount SMD-8P,3.2x1.6mm

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