VISHAY · FETs & Power MOSFETs · MPN SI5504BDC-T1-E3
No reviews yet — be the first to review VISHAY SI5504BDC-T1-E3.
| Gate Charge(Qg) | 4.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 4A;3.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF;31pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 220pF;170pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array Surface Mount SMD-8P,3.2x1.6mm