VISHAY SI5476DU-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI5476DU-T1-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)12A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)41mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

60V 12A 3V 20W 41mΩ@4.5V 1 N-channel N-Channel PowerPAK Single FETs, MOSFETs RoHS

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