VISHAY · FETs & Power MOSFETs · MPN SI5471DC-T1-GE3
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| Gate Charge(Qg) | 30nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| RDS(on) | 20mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.945nF |
20V 6A 600mV 2.5W 20mΩ@4.5V 1 P-Channel SMD Single FETs, MOSFETs RoHS