VISHAY · FETs & Power MOSFETs · MPN SI5468DC-T1-GE3
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| Gate Charge(Qg) | 3.8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 28mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 435pF |
N-Channel 30V 6A 3.6W Surface Mount SMD-8P,3.2x1.6mm