VISHAY · FETs & Power MOSFETs · MPN SI5459DU-T1-GE3
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 3.5W;10.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 52mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 665pF |
| Type | P-Channel |
P-Channel 20V 8A 3.5W 10.9W Surface Mount SMD-8P,3.2x1.6mm