VISHAY · FETs & Power MOSFETs · MPN SI5457DC-T1-GE3
No reviews yet — be the first to review VISHAY SI5457DC-T1-GE3.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 12.5nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 225pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 5.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF |
| RDS(on) | 36mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
P-Channel 20V 6A 5.7W Surface Mount SMD-8P,3.2x1.6mm