VISHAY · FETs & Power MOSFETs · MPN SI5442DU-T1-GE3
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| Gate Charge(Qg) | 45nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 280pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 13.5mΩ@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
| Type | N-Channel |
N-Channel 20V 25A 20W Surface Mount SMD