VISHAY · FETs & Power MOSFETs · MPN SI5441BDC-T1-E3
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| Gate Charge(Qg) | 22nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.3W |
| RDS(on) | 45mΩ@4.5V |
| Number | 1 P-Channel |
20V 4.4A 1.4V 1.3W 45mΩ@4.5V 1 P-Channel SMD-8P Single FETs, MOSFETs RoHS