VISHAY SI5419DU-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI5419DU-T1-GE3

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Specifications

Gate Charge(Qg)15.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)33mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 30V 12A 31W Surface Mount PowerPAK

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