VISHAY · FETs & Power MOSFETs · MPN SI5418DU-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 3.1W;31W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 14.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
30V 12A 1.2V 14.5mΩ@10V 1 N-channel ChipFET-8 Single FETs, MOSFETs RoHS