VISHAY · FETs & Power MOSFETs · MPN SI5411EDU-T1-GE3
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| Gate Charge(Qg) | 70nC@8V |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 31W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 20.6mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
P-Channel 12V 25A 31W Surface Mount DFN-8(1.9x3)