VISHAY · FETs & Power MOSFETs · MPN SI5403DC-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 215pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 6.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| RDS(on) | 44mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.34nF |
P-Channel 30V 6A 6.3W Surface Mount SMD-8P,3.2x1.6mm