VISHAY · FETs & Power MOSFETs · MPN SI4963BDY-T1-E3
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| Gate Charge(Qg) | 21nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.1W |
| RDS(on) | 32mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
20V 4.9A 1.4V 1.1W 32mΩ@4.5V 2 P-Channel SOIC-8 Single FETs, MOSFETs RoHS