VISHAY SI4948BEY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4948BEY-T1-E3

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Specifications

Configuration-
Current - Continuous Drain(Id)3.1A
RDS(on)150mΩ@4.5V
Pd - Power Dissipation2.4W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)22nC@10V
Operating Temperature-55℃~+175℃

Technical details

P-Channel 60V 3.1A 2.4W Surface Mount SO-8

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