VISHAY · FETs & Power MOSFETs · MPN SI4946CDY-T1-GE3
No reviews yet — be the first to review VISHAY SI4946CDY-T1-GE3.
| Current - Continuous Drain(Id) | 6.1A |
|---|---|
| RDS(on) | 40.9mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 350pF |
| Gate Charge(Qg) | 2.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
6.1A 40.9mΩ@10V 2W 3V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS