VISHAY SI4946BEY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4946BEY-T1-GE3

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Specifications

Current - Continuous Drain(Id)6.5A
Pd - Power Dissipation3.7W
RDS(on)41mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)44pF
Number2 N-Channel
Input Capacitance(Ciss)840pF
Gate Charge(Qg)25nC@10V
Vgs±20V
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 60V 6.5A Surface Mount SO-8

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