VISHAY · FETs & Power MOSFETs · MPN SI4946BEY-T1-GE3
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| Current - Continuous Drain(Id) | 6.5A |
|---|---|
| Pd - Power Dissipation | 3.7W |
| RDS(on) | 41mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 840pF |
| Gate Charge(Qg) | 25nC@10V |
| Vgs | ±20V |
| Operating Temperature | -55℃~+175℃ |
N-Channel Array 60V 6.5A Surface Mount SO-8