VISHAY · FETs & Power MOSFETs · MPN Si4943CDY-T1-GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 19.2mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 385pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.945nF |
| Gate Charge(Qg) | 41nC@10V |
| Operating Temperature | -50℃~+150℃ |
P-Channel 20V 8A 2W Surface Mount SOIC-8-150mil