VISHAY · FETs & Power MOSFETs · MPN SI4936CDY-T1-GE3
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| Current - Continuous Drain(Id) | 5.8A |
|---|---|
| RDS(on) | 50mΩ@4.5V |
| Pd - Power Dissipation | 2.3W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 325pF |
| Gate Charge(Qg) | - |
| Operating Temperature | - |
| Output Capacitance(Coss) | 60pF |
5.8A 50mΩ@4.5V 2.3W 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS