VISHAY · FETs & Power MOSFETs · MPN SI4936CDY-T1-E3
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| Current - Continuous Drain(Id) | 5.8A |
|---|---|
| RDS(on) | 40mΩ@10V |
| Pd - Power Dissipation | 1.7W |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 325pF |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
5.8A 40mΩ@10V 1.7W 1.2V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS