VISHAY · FETs & Power MOSFETs · MPN SI4936BDY-T1-GE3
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.8W |
| RDS(on) | 35mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 530pF |
30V 6.9A 3V 2.8W 35mΩ@10V 2 N-Channel SOIC-8 Single FETs, MOSFETs RoHS