VISHAY · FETs & Power MOSFETs · MPN SI4932DY-T1-GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 17mΩ@4.5V |
| Pd - Power Dissipation | 3.2W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.75nF |
| Gate Charge(Qg) | 14.7nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 265pF |
8A 17mΩ@4.5V 3.2W 2.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS