VISHAY SI4931DY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4931DY-T1-E3

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Specifications

Current - Continuous Drain(Id)8.9A
RDS(on)28mΩ@1.8V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)52nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

P-Channel 12V 8.9A 2W Surface Mount SO-8

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