VISHAY · FETs & Power MOSFETs · MPN SI4931DY-T1-E3
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| Current - Continuous Drain(Id) | 8.9A |
|---|---|
| RDS(on) | 28mΩ@1.8V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 12V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 52nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
P-Channel 12V 8.9A 2W Surface Mount SO-8