VISHAY SI4925DDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4925DDY-T1-GE3

No reviews yet — be the first to review VISHAY SI4925DDY-T1-GE3.

Specifications

Current - Continuous Drain(Id)7.3A
RDS(on)29mΩ@10V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)185pF
Number2 P-Channel
Input Capacitance(Ciss)1.35nF
Gate Charge(Qg)15nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 7.3A 2.5W Surface Mount SO-8

Related FETs & Power MOSFETs