VISHAY · FETs & Power MOSFETs · MPN SI4922BDY-T1-E3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 62nC@10V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF |
| RDS(on) | 24mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.07nF |
| Type | N-Channel |
30V 8A 1.8V 3.1W 24mΩ@2.5V 2 N-Channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS