VISHAY · FETs & Power MOSFETs · MPN SI4909DY-T1-GE3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 34mΩ@4.5V |
| Pd - Power Dissipation | 3.2W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 40V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 2nF |
| Gate Charge(Qg) | 33nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 240pF |
P-Channel 40V 8A 3.2W Surface Mount SO-8