VISHAY · FETs & Power MOSFETs · MPN SI4900DY-T1-GE3
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 5.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 72mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 665pF |
| Type | N-Channel |
60V 5.3A 3.1W 72mΩ@4.5V 2 N-Channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS