VISHAY · FETs & Power MOSFETs · MPN SI4900DY-T1-E3
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| Current - Continuous Drain(Id) | 5.3A |
|---|---|
| RDS(on) | 72mΩ@4.5V |
| Pd - Power Dissipation | 3.1W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 665pF |
| Gate Charge(Qg) | 20nC@10V |
| Operating Temperature | -55℃~+150℃ |
5.3A 72mΩ@4.5V 3.1W 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS