VISHAY · FETs & Power MOSFETs · MPN SI4896DY-T1-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 41nC@10V |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 16.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
N-Channel 80V 9.5A 3.1W Surface Mount SOIC-8