VISHAY · FETs & Power MOSFETs · MPN SI4896DY-T1-E3
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 22mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
80V 9.5A 3.1W 22mΩ@6V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS