VISHAY · FETs & Power MOSFETs · MPN SI4890DY-T1-E3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 20nC@5V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.6W |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
30V 11A 800mV 1.6W 12mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS