VISHAY · FETs & Power MOSFETs · MPN SI4874BDY-T1-GE3
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| Gate Charge(Qg) | 25nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.6W |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.23nF |
30V 12A 3V 1.6W 7mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS