VISHAY · FETs & Power MOSFETs · MPN SI4864DY-T1-GE3
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| Gate Charge(Qg) | 70nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 13.4pF |
| RDS(on) | 4.7mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10pF |
| Type | N-Channel |
20V 25A 2V 3.5W 4.7mΩ@2.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS