VISHAY SI4864DY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4864DY-T1-E3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)70nC@4.5V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.6W
RDS(on)3.5mΩ@4.5V
Number1 N-channel

Technical details

20V 17A 2V 1.6W 3.5mΩ@4.5V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS

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