VISHAY · FETs & Power MOSFETs · MPN SI4862DY-T1-E3
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| Gate Charge(Qg) | 70nC@4.5V |
|---|---|
| Drain to Source Voltage | 16V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 1.6W |
| RDS(on) | 3.3mΩ@4.5V |
| Number | 1 N-channel |
16V 17A 600mV 1.6W 3.3mΩ@4.5V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS