VISHAY SI4848BDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4848BDY-T1-GE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)6nC@10V
Output Capacitance(Coss)41pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
RDS(on)110mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)3pF
Input Capacitance(Ciss)400pF
TypeN-Channel

Technical details

150V 5A 4V 2.5W 110mΩ@6V N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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