VISHAY · FETs & Power MOSFETs · MPN SI4842BDY-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 100nC@10V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W;6.25W |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.65nF |
30V 28A 3V 4.2mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS