VISHAY · FETs & Power MOSFETs · MPN SI4840BDY-T1-E3
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 6W |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
40V 19A 3V 6W 12mΩ@4.5V 1 N-channel N-Channel SOIC-8-150mil Single FETs, MOSFETs RoHS