VISHAY SI4838BDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4838BDY-T1-GE3

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)50nC@2.5V
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation5.7W
Reverse Transfer Capacitance (Crss@Vds)1.145nF
RDS(on)4mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)5.76nF
TypeN-Channel

Technical details

N-Channel 12V 34A 5.7W Surface Mount SO-8

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