VISHAY SI4835DDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4835DDY-T1-GE3

No reviews yet — be the first to review VISHAY SI4835DDY-T1-GE3.

Specifications

Gate Charge(Qg)65nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)325pF
RDS(on)30mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.96nF
TypeP-Channel

Technical details

P-Channel 30V 13A 20W Surface Mount SO-8

Related FETs & Power MOSFETs