VISHAY · FETs & Power MOSFETs · MPN SI4835DDY-T1-E3
No reviews yet — be the first to review VISHAY SI4835DDY-T1-E3.
| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 5.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF |
| RDS(on) | 30mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.96nF |
| Type | P-Channel |
30V 13A 3V 5.6W 30mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS