VISHAY · FETs & Power MOSFETs · MPN SI4816BDY-T1-E3
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 8.2A |
| Pd - Power Dissipation | 800mW |
| RDS(on) | 22.5mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 7.8pF |
| Gate Charge(Qg) | 11.6nC@5V |
| Operating Temperature | -55℃~+150℃ |
8.2A 800mW 22.5mΩ@4.5V 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS