VISHAY · FETs & Power MOSFETs · MPN SI4800BDY-T1-GE3
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| RDS(on) | 18.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.7pF |
| Type | N-Channel |
N-Channel 30V 9A 1.3W Surface Mount SO-8