VISHAY · FETs & Power MOSFETs · MPN SI4670DY-T1-GE3
No reviews yet — be the first to review VISHAY SI4670DY-T1-GE3.
| Current - Continuous Drain(Id) | 7A |
|---|---|
| RDS(on) | 23mΩ@10V |
| Pd - Power Dissipation | 1.8W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 25V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 680pF |
| Gate Charge(Qg) | 18nC@10V |
| Operating Temperature | -55℃~+150℃ |
7A 23mΩ@10V 1.8W 1V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS