VISHAY · FETs & Power MOSFETs · MPN SI4634DY-T1-E3
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| Gate Charge(Qg) | 21.5nC@15V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 24.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 5.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.15nF |
30V 24.5A 2.6V 3.6W 5.2mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS