VISHAY · FETs & Power MOSFETs · MPN SI4564DY-T1-GE3
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| Current - Continuous Drain(Id) | 10A |
|---|---|
| RDS(on) | 28mΩ@4.5V |
| Pd - Power Dissipation | 3.1W;3.2W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 40V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 202pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 2nF |
| Gate Charge(Qg) | 21.7nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 240pF |
N-Channel+P-Channel Array 40V 10A Surface Mount SO-8