VISHAY SI4559ADY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4559ADY-T1-GE3

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.4W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)150mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)665pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 60V 5.3A 3.4W Surface Mount SO-8

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