VISHAY · FETs & Power MOSFETs · MPN SI4559ADY-T1-E3
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 95pF |
| Current - Continuous Drain(Id) | 5.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 665pF |
| Type | N-Channel + P-Channel |
60V 5.3A 3V 3.4W 120mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOIC-8 Single FETs, MOSFETs RoHS