VISHAY SI4554DY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4554DY-T1-GE3

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Specifications

Current - Continuous Drain(Id)6.8A
RDS(on)24mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage40V
Reverse Transfer Capacitance (Crss@Vds)41pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)690pF
Gate Charge(Qg)6.5nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 40V 6.8A Surface Mount SO-8

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